| 摘要 |
An apparatus for forming at least one layer of substantially homogenous material on a substrate comprising: a processing chamber having a substrate support system on which is disposed a wafer; an energy source for providing thermal or a-thermal energy to the chamber; a source of reactants for the chamber; and a "smart controller" connected to the chamber for "real-time" control of the energy sources and the reactant sources. Additionally a method for forming at least one layer of substantially homogenous material layer on a substrate, comprising: in-situ cleaning of the substrate by selectively using appropriate amounts of thermal, sonic, optical and plasma energy while comparing actual surface topography of the substrate with an expected surface topography via said "smart controller".
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