发明名称 |
Method of forming a dielectric film |
摘要 |
A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas. |
申请公布号 |
US6669825(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20010867767 |
申请日期 |
2001.05.31 |
申请人 |
OHMI TADAHIRO |
发明人 |
OHMI TADAHIRO;SUGAWA SHIGETOSHI |
分类号 |
C23C8/02;C23C8/36;H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/8238;H01L21/8247;H01L27/105;H01L27/115;H01L29/423;H01L29/792;(IPC1-7):C23C14/34;B05D3/00;H05H1/22 |
主分类号 |
C23C8/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|