发明名称 |
Semiconductor device having shallow trench isolation structure |
摘要 |
A semiconductor device having a shallow trench isolation (STI) structure, which reduces leakage current between adjacent P-FETs, and a manufacturing method thereof. The device comprises a semiconductor substrate having first and second trenches, the first trench being formed in a cell area; a first sidewall oxide layer formed on inner surfaces of the first and second trenches; a second sidewall oxide layer formed on a surface of the first sidewall oxide layer in the second trench; a first relief liner formed on the first sidewall oxide layer in the first trench; a second relief liner formed on the first relief liner in the first trench, and also formed on the second sidewall oxide layer in the second trench; and a dielectric material formed within the first and second trenches.
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申请公布号 |
US6670689(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20010990417 |
申请日期 |
2001.11.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH YONG-CHUL;ROH JUN-YONG |
分类号 |
H01L21/76;H01L21/762;H01L21/8242;H01L27/08;H01L27/10;H01L27/108;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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