| 摘要 |
In the pattern of a selective growth mask for directly forming an active layer, open stripes for growing recombination layers to be inserted into a current blocking are formed in addition to an open stripe for growing the active layer. By this mask pattern, the position and band gap of the recombination layers are controlled. Whereby, at an arbitrary position in the vicinity of the active layer, recombination layers having an arbitrary band gap can be batch formed together with the active layer. Thus, a semiconductor laser element with an excellent high-temperature high-output characteristic can be fabricated with good uniformity and reproducibility.
|
