| 发明名称 |
Composite transistor having a slew-rate control |
| 摘要 |
A metal oxide semiconductor transistor having a slew-rate control is disclosed. The transistor having a slew-rate control includes an elongated diffusion area and an elongated gate overlying the diffusion area. The elongated diffusion area has at least two diffusion regions, each having a threshold voltage that is different from each other. The elongated gate has a gate contact at only one side of the elongated diffusion area.
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| 申请公布号 |
US6670683(B2) |
申请公布日期 |
2003.12.30 |
| 申请号 |
US20010754156 |
申请日期 |
2001.01.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERNSTEIN KERRY;CORREALE, JR. ANTHONY;HOOK TERENCE BLACKWELL;STOUT DOUGLAS WILLARD |
| 分类号 |
H01L29/10;(IPC1-7):H01L29/76;H01L27/01;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L29/10 |
| 代理机构 |
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