Semiconductor laser device

摘要

A exemplary method of fabricating a semiconductor laser device includes forming an electrode on each of a top surface and a bottom surface of a laminated structure comprised of semiconductor materials, then cleaving the laminated structure to form facets of a cavity, and next epitaxially growing a compound semiconductor on the facets of the cavity. Works involved in the cleavage and the epitaxial crystal growth are performed in a low oxygen and moisture concentration atmosphere, so that the occurrence of COD is suppressed in the fabricated semiconductor laser device.