发明名称 |
Dual-scan thin film processing system |
摘要 |
A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux through the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned adjacent to the shield. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion.
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申请公布号 |
US6669824(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20010840394 |
申请日期 |
2001.04.23 |
申请人 |
UNAXIS USA, INC. |
发明人 |
SFERLAZZO PIERO;LEE CHUNGHSIN |
分类号 |
C23C14/04;C23C14/46;(IPC1-7):C23C14/34;C23C14/35;C23C16/00 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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