发明名称 Semiconductor device
摘要 A surface orientation other than a (100) surface orientation is exposed to the surface portion of a silicon substrate having the (100) surface orientation, for example. A silicon epitaxial growth layer is formed only on a region containing a channel forming region on the (100) surface orientation.
申请公布号 US6670694(B2) 申请公布日期 2003.12.30
申请号 US20010916506 申请日期 2001.07.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MOMOSE HISAYO
分类号 H01L21/20;H01L21/205;H01L21/336;H01L21/8238;H01L27/092;H01L29/04;H01L29/78;(IPC1-7):H01L29/04;H01L31/036;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L23/58 主分类号 H01L21/20
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