| 发明名称 |
HF etching and oxide scale removal |
| 摘要 |
Methods for etching or removing oxide scale from a substrate by applying a composition containing a polymer and an effective amount of hydrofluoric acid and maintaining the composition on the substrate until the substrate is etched or the oxide scale is removed.
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| 申请公布号 |
US6670281(B2) |
申请公布日期 |
2003.12.30 |
| 申请号 |
US19980223359 |
申请日期 |
1998.12.30 |
| 申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
LULY MATTHEW H.;SINGH RAJIV R.;REDMON CHARLES L.;MCKOWN JEFFREY W.;PRATT ROBERT |
| 分类号 |
C03C15/00;C23G1/02;(IPC1-7):H01C21/302 |
主分类号 |
C03C15/00 |
| 代理机构 |
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