发明名称 |
Integrated low k dielectrics and etch stops |
摘要 |
A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
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申请公布号 |
US6669858(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20010011369 |
申请日期 |
2001.11.05 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
BJORKMAN CLAES H.;YU MIN MELISSA;SHAN HONGQUING;CHEUNG DAVID W.;YAU WAI-FAN;LIU KUOWEI;CHAPRA NASREEN GAZALA;YIN GERALD;MOGHADAM FARHAD K.;HUANG JUDY H.;YOST DENNIS;TANG BETTY;KIM YUNSANG |
分类号 |
H01L21/302;A01C15/02;A01C17/00;C23C16/40;H01L21/3065;H01L21/31;H01L21/311;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):B44C1/22 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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地址 |
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