发明名称 Cascode amplifier integrated circuit with frequency compensation capability
摘要 A cascode amplifier integrated circuit (IC) with frequency compensation capability that possesses a tight overall variation in transient rise and fall time, is relatively small in size and has a relatively high RC series circuit breakdown voltage. The cascode amplifier IC includes an input bias terminal configured to receive a bias voltage Vb, a power supply input terminal configured to receive a power supply voltage Vcc, an input signal terminal configured to receive an input voltage signal Vin, and an output signal terminal. The cascode amplifier IC also includes a gain stage circuit, an output buffer stage circuit and a resistance-capacitance (RC) series circuit configured to provide frequency compensation during operation of the cascode amplifier IC. The RC series circuit has a peaking bipolar transistor configured to provide a bipolar junction peaking capacitance between the output signal terminal and the gain stage circuit. The bipolar junction peaking capacitance can be provided, for example, as a reverse biased base-collector junction capacitance (Cbc) of an NPN peaking bipolar transistor. The cascode amplifier IC is smaller in size than conventional cascode amplifier ICs, since the size of the peaking bipolar transistor is smaller than conventional metal-polysilicon peaking capacitors. Furthermore, the collector-base breakdown voltage BVcb of the peaking bipolar transistor is higher than the breakdown voltage of conventional metal-polysilicon peaking capacitors.
申请公布号 US6670851(B1) 申请公布日期 2003.12.30
申请号 US20000615293 申请日期 2000.07.13
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 HOJABRI PEYMAN;CHIU HON KIN
分类号 H03F3/195;(IPC1-7):H03F1/22 主分类号 H03F3/195
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