| 摘要 |
A pattern formation method includes: forming a photoresist layer of a positive type on a substrate; exposing to light and developing the photoresist layer using an inversion mask having an opening at a site where a pattern is desired to be formed finally, thereby forming an opening portion in the photoresist layer to expose the substrate; applying a non-photosensitive organic film on an entire surface of the resulting substrate, so that the non-photosensitive organic film is embedded in the opening portion; etching back an entire surface of the non-photosensitive organic film on the photoresist layer until the photoresist layer is exposed; and exposing to light and developing an entire surface of the photoresist layer to remove the photoresist layer, thereby obtaining the non-photosensitive organic film having the desired pattern.
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