| 摘要 |
A method for forming a lightly doped diffusion region comprises providing a substrate structure. A first photoresist layer, having a lightly doped diffusion region pattern, is formed on the substrate structure. Next, dopants of a first type conductivity are implanted into the substrate structure for forming a lightly doped diffusion region in the substrate structure. Then a second photoresist layer is conformal formed on the first photoresist layer and the substrate structure. Next, the second photoresist layer is etched back and then dopants of a second type conductivity are implanted into the substrate structure for forming a source/drain region underlying the lightly doped diffusion region in the substrate structure.
|
