| 摘要 |
PURPOSE: A method for manufacturing a cell aperture mask of a semiconductor device is provided to improve manufacturing efficiency by coating a barrier layer beam on a silicon wafer to block electrons. CONSTITUTION: A silicon oxide layer(23) and an upper silicon wafer(25) with thin thickness are sequentially formed on a lower silicon wafer(20). The upper silicon wafer and the silicon oxide layer are selectively etched by using a photoresist pattern as a mask. The lower silicon wafer of an aperture mask pattern region is removed, thereby forming an SOI wafer. A barrier layer(27) for blocking electron beam is coated on the entire surface of the SOI wafer. The barrier layer is one selected from group consisting of gold, tungsten, and copper.
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