| 摘要 |
1,175,049. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 23 Dec., 1966 [24 Dec., 19651, No. 57728/66. Heading H1K. One region 2 of a tunnel diode is provided with two non-rectifying thermoelectric contacts 3, 4, to which a D.C. or A.C. potential is applied, whereby " hot " electrons are injected from the heated contact into the region 2 to modulate the current across the tunnel junction. The P+ region 2, preferably less than 1 Á thick, may be diffused through a mask or alloyed into the P + region 1, or may be epitaxially deposited thereon. The contacts 3, 4 may be of gold, aluminium or a semi-conductor, and may be vapour deposited through an insulating, e.g. oxide, mask. Alternately, the contacts may be thermocompression bonded to the upper region. In a sccond embodiment the region to which the contacts are applied is the N + region. The region of the diode characteristic influenced by the " hot " electrons is preferably that below the dip-point voltage. |
