发明名称 |
METHOD OF FORMING CONTACT |
摘要 |
A method of manufacturing a contact is disclosed. A substrate is provided, and a first dielectric layer and a metal layer are formed thereon in sequence. A second dielectric layer is formed on the metal layer and the first dielectric layer. A bottom contact is formed in the second dielectric layer to electrically connect to the metal layer. A node contact is formed in the first and second dielectric layers. A capacitor is formed on the dielectric layer to electrically connect to the node contact, and a middle contact is formed on the second dielectric layer to electrically connect to the bottom contact. A third dielectric layer is formed on the capacitor, the middle contact and the second dielectric layer. A top contact is formed in the third dielectric layer to electrically connect to the middle contact.
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申请公布号 |
US2003235978(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20030248520 |
申请日期 |
2003.01.27 |
申请人 |
SHAO YAO-TING;SHIGERU ISHIBASHI |
发明人 |
SHAO YAO-TING;SHIGERU ISHIBASHI |
分类号 |
H01L21/28;H01L21/4763;H01L21/768;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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