发明名称 |
METHOD OF FORMING AN ARRAY OF FLASH FIELD EFFECT TRANSISTORS AND CIRCUITRY PERIPHERAL TO SUCH ARRAY |
摘要 |
Thermal oxidation of a peripheral area of a semiconductor substrate is globally restricted with an overlying oxidation resistant layer that is not globally received within the array during formation of a sacrificial oxide layer prior to forming any transistor gate dielectric layer within the array. At least some FLASH field effect transistor gates having floating gate dielectric of a first thickness are formed within the array and at least some non-FLASH field effect transistor gates having gate dielectric of a second thickness are formed within the periphery, with the first and second thicknesses being different. Other aspects and implementations are disclosed.
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申请公布号 |
US2003235956(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20020179893 |
申请日期 |
2002.06.24 |
申请人 |
LINDSAY ROGER W.;HELM MARK A. |
发明人 |
LINDSAY ROGER W.;HELM MARK A. |
分类号 |
H01L21/8247;H01L27/105;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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