发明名称 |
Methods of forming an array of flash field effect transistors and circuitry peripheral to such array |
摘要 |
A method of forming an array of FLASH field effect transistors and circuitry peripheral to such array includes forming a sacrificial oxide over an array area and a periphery area of a semiconductor substrate. After forming the sacrificial oxide, at least one conductivity modifying implant is conducted into semiconductive material of the substrate within the array without conducting the one conductivity modifying implant into semiconductive material of the substrate within the periphery. The sacrificial oxide is removed from the array while the sacrificial oxide is left over the periphery. After removing the sacrificial oxide from the array, at least some FLASH transistor gates are formed within the array and at least some non-FLASH transistor gates are formed within the periphery
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申请公布号 |
US2003235963(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20020179868 |
申请日期 |
2002.06.24 |
申请人 |
LINDSAY ROGER W.;HELM MARK A. |
发明人 |
LINDSAY ROGER W.;HELM MARK A. |
分类号 |
H01L21/762;H01L21/8234;H01L21/8247;H01L27/105;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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