发明名称 Electrostatic discharge protection device
摘要 An ESD protection device. The ESD protection device is set between a memory device, a second voltage level and a pad coupled to a first voltage level. The ESD protection device includes a first second type doped region formed on the first type substrate and coupled to the first voltage level, a second second type doped region formed on the first type substrate and coupled to the second voltage level, a third second type doped region formed on the first type substrate, a second type well formed between the first second type doped region and the third second type doped region, and an isolation element formed between the second second type doped region and the third second type doped region.
申请公布号 US2003234426(A1) 申请公布日期 2003.12.25
申请号 US20020273890 申请日期 2002.10.21
申请人 LIU MENG-HUANG;LAI CHUN-HSIANG;SU SHIN;LU TAO-CHENG 发明人 LIU MENG-HUANG;LAI CHUN-HSIANG;SU SHIN;LU TAO-CHENG
分类号 H01L23/60;H01L23/62;H01L27/02;(IPC1-7):H01L23/62 主分类号 H01L23/60
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