发明名称 |
Semiconductor memory cell and semiconductor memory device |
摘要 |
The semiconductor memory cell is characterized in that at least one modulation region is provided between a first gate electrode of the gate electrode configuration and the insulation region, and in that the modulation region has or is formed from a material or modulation material having electrical and/or further material properties that can be modulated in a controllable manner between at least two states in such a way that, in accordance with these states of the modulation material or of the modulation region, the channel region can be influenced electromagnetically, in particular for a given electrical potential difference between the first gate electrode and the source/drain regions.
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申请公布号 |
US2003234397(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20030395428 |
申请日期 |
2003.03.24 |
申请人 |
SCHMID GUNTER;HALIK MARCUS;KLAUK HAGEN;DEHM CHRISTINE;HANEDER THOMAS;MIKOLAJICK THOMAS |
发明人 |
SCHMID GUNTER;HALIK MARCUS;KLAUK HAGEN;DEHM CHRISTINE;HANEDER THOMAS;MIKOLAJICK THOMAS |
分类号 |
G11C11/56;G11C13/02;H01L27/10;H01L29/78;(IPC1-7):H01L29/04 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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