发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A cell array is configured by arranging a plurality of electrically writable erasable nonvolatile memory cells on a semiconductor substrate. Each of the memory cells has a charge accumulation layer formed via a first gate insulating film and a gate electrode formed on the charge accumulation layer via a second gate insulating film. A control circuit controls the sequence of writing and erasing the data into and from a memory cell selected in the memory cell. In writing the data into the memory cell, a first write operation is to apply a write pulse voltage with a first step-up voltage between the gate electrode and the semiconductor substrate. A second write operation is to apply a write pulse voltage with a second step-up voltage lower than the first step-up voltage.
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申请公布号 |
US2003235080(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20030393453 |
申请日期 |
2003.03.21 |
申请人 |
YAEGASHI TOSHITAKE;GODA AKIRA;NOGUCHI MITSUHIRO |
发明人 |
YAEGASHI TOSHITAKE;GODA AKIRA;NOGUCHI MITSUHIRO |
分类号 |
G11C16/00;G11C16/04;G11C16/34;(IPC1-7):G11C16/34 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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