发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
There is provided a structure of a pixel TFT (n-channel type TFT) in which an off current value is sufficiently low. In impurity regions, a concentration distribution of an impurity element imparting one conductivity type is made to have a concentration gradient, the concentration is made low at a side of a channel formation region, and the concentration is made high at the side of an end portion of a semiconductor layer.
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申请公布号 |
US2003234424(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20030413985 |
申请日期 |
2003.04.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUZAWA HIDEOMI;TSUNODA AKIRA |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L21/00;H01L27/01;H01L31/039 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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