发明名称 |
Method for fabricating capacitor in semiconductor device |
摘要 |
The present invention relates to a method for fabricating a capacitor in a semiconductor device capable of preventing a decrease in capacitance and improving a leakage current characteristic. The inventive method includes the steps of: forming a lower electrode on a substrate; cleaning the lower electrode with use of HF and NH4OH; nitrifying the lower electrode through a NH3 annealing; depositing a nitride layer on the nitrified lower electrode; and forming sequentially a dielectric material and an upper electrode on the nitride layer.
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申请公布号 |
US2003235999(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20020320501 |
申请日期 |
2002.12.17 |
申请人 |
KIM KYONG-MIN;OH HOON-JUNG;PARK JONG-BUM |
发明人 |
KIM KYONG-MIN;OH HOON-JUNG;PARK JONG-BUM |
分类号 |
H01L27/04;H01L21/02;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/823;H01L21/824;H01L21/20;H01L21/31;H01L21/469 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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