发明名称 |
METHOD FOR FABRICATING CAPACITOR IN SEMICONDUCTOR DEVICE |
摘要 |
The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor capable of stably forming a nitride layer on a lower electrode and obtaining improvements on stable capacitance and leakage current characteristics. The inventive method for fabricating a capacitor includes the steps of: forming a lower electrode on a substrate; forming a nitride-based first dielectric thin layer on the lower electrode; forming a second dielectric thin layer by depositing an Al2O3 layer on the nitride-based first dielectric thin layer; forming a third dielectric thin layer on the second dielectric thin layer; and forming an upper electrode on the third dielectric thin layer.
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申请公布号 |
US2003235947(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20020316874 |
申请日期 |
2002.12.12 |
申请人 |
PARK JONG-BUM;OH HOON-JUNG;KIM KYONG-MIN |
发明人 |
PARK JONG-BUM;OH HOON-JUNG;KIM KYONG-MIN |
分类号 |
H01L27/04;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L21/824;H01L21/336 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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