| 摘要 |
A surface emitting semiconductor laser includes a substrate, a lower semiconductor multilayer mirror of a first conduction type formed on the substrate, an upper semiconductor multilayer mirror of a second conduction type, an active region disposed between the lower and upper semiconductor multilayer mirrors, a current confinement portion arranged between the lower and upper semiconductor multilayer mirrors, and a metal layer provided on the upper semiconductor multilayer mirror. A mesa structure is formed so as to include at least the upper semiconductor multilayer mirror, the current confinement portion and the metal layer. The mesa structure has a side surface aligned with the metal layer.
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