| 发明名称 |
Fabrication process of a semiconductor device |
| 摘要 |
A method of fabrication a semiconductor device includes the steps of forming an insulation film containing Si and oxygen on a silicon substrate, and depositing a metal oxide film on the insulation film by a chemical vapor deposition process that uses a metal organic source material, wherein the step of depositing the metal oxide film is conducted such that the metal oxide film takes a crystalline state immediately after the deposition step.
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| 申请公布号 |
US2003236001(A1) |
申请公布日期 |
2003.12.25 |
| 申请号 |
US20030457450 |
申请日期 |
2003.06.10 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SHINRIKI HIROSHI;KUBO KAZUMI |
| 分类号 |
C23C16/02;C23C16/40;H01L21/02;H01L21/28;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/00;H01L21/31;H01L21/469 |
主分类号 |
C23C16/02 |
| 代理机构 |
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代理人 |
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