| 摘要 |
A semiconductor manufacturing method that includes defining a substrate, depositing a layer of first material over the substrate, providing a layer of photoresist over the layer of first material, patterning and defining the photoresist layer to form at least one photoresist structure having at least one substantially vertical sidewall and one substantially horizontal surface, wherein a surface of the at least one substantially vertical sidewall is in the shape of a standing wave, and depositing a layer of polymer over the patterned and defined photoresist layer, wherein the polymer layer is substantially conformal and covers the at least one substantially vertical sidewall and one substantially horizontal surface, and wherein the polymer layer covers the standing wave on the surface of the at least one substantially vertical sidewall to form a substantially smooth profile.
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