发明名称 |
Method of avoiding plasma arcing during RIE etching |
摘要 |
A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a deposition layer according to plasma assisted chemical vapor deposition (CVD) process; treating the deposition layer portion with a hydrogen plasma treatment to reduce an electrical charge nonuniformity of the deposition layer including applying a biasing power to the semiconductor wafer; and, carrying out a subsequent reactive ion etching process.
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申请公布号 |
US2003235994(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20020175613 |
申请日期 |
2002.06.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
PAN SHING-CHYANG;HUANG YU-CHUN;JING SHWANGMING |
分类号 |
H01L21/311;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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