发明名称 |
Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds |
摘要 |
The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.
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申请公布号 |
US2003235782(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20030439472 |
申请日期 |
2003.05.16 |
申请人 |
PADMANABAN MUNIRATHNA;KUDO TAKANORI;LEE SANGHO;DAMMEL RALPH R.;RAHMAN M. DALIL |
发明人 |
PADMANABAN MUNIRATHNA;KUDO TAKANORI;LEE SANGHO;DAMMEL RALPH R.;RAHMAN M. DALIL |
分类号 |
G02F1/13;G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/038;C07D327/10;C07C323/16;C07C22/00 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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