发明名称 |
PHOTOELECTRIC TRANSDUCER AND ITS MANUFACTURING METHOD |
摘要 |
<p>A photoelectric transducer comprises an electrode (5) on which a semiconductor layer (7) carrying a sensitizing dye is deposited. The semiconductor layer (7) contains semiconductor particles and a binder and has a porosity of 40 to 80%. A method for manufacturing a photoelectric transducer by applying a solution containing semiconductor particles and a binder to an electrode (5), drying the electrode, and pressing the electrode under a pressure of 20 to 200 MPa so as to form a semiconductor layer (7) is also disclosed. By the method, a photoelectric transducer comprising a semiconductor layer where a conduction path of photo-excited electrons is ensured without sintering the semiconductor layer at a high temperature and which has an adhesive power adaptable to the flexibility of the base and exhibiting excellent photoelectric transducing characteristics can be provided.</p> |
申请公布号 |
WO03107471(A1) |
申请公布日期 |
2003.12.24 |
申请号 |
WO2003JP07531 |
申请日期 |
2003.06.13 |
申请人 |
HITACHI MAXELL, LTD.;KOJIMA, KATSUNORI;MIYATA, TERUHISA |
发明人 |
KOJIMA, KATSUNORI;MIYATA, TERUHISA |
分类号 |
H01G9/20;H01M14/00;(IPC1-7):H01M14/00;H01L31/04 |
主分类号 |
H01G9/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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