发明名称 PROCESS FOR PREPARING NANOSTRUCTURED MATERIALS OF CONTROLLED SURFACE CHEMISTRY
摘要 <p>A process to prepare stoichiometric-nanostructured materials comprising generating a plasma, forming an 'active volume' through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field-free zone, either (1) in a region in close proximity to a zone of charge carrier generation, or (2) in a region of current conduction between field generating elements, including the surface of the field generation elements, and transferring energy from the plasma to a precursor material to form in the 'active volume' at least one stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material. The surface chemistry of the resulting nanostructured materials is substantially enhanced to yield dispersion stable materials with large zeta-potentials.</p>
申请公布号 WO2003106016(P1) 申请公布日期 2003.12.24
申请号 US2003006175 申请日期 2003.02.28
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