THICK SANDWICH WAFER FOR MEMS FABRICATION

摘要

An improved method of manufacturing MEMS devices having relatively large components, such as large diameter micro mirrors, which require to be tilted at an angle to the wafer substrate, or displaced generally vertically, is described. In the described embodiment an SOI wafer having a sacrificial oxide layer at least 20 mu m thick is formed. This provides sufficient space between the wafer substrate and a component formed in the upper silicon layer to allow a relatively large component to be tilted or displaced by a desired amount relative to the wafer substrate, The SOI wafer may be formed by bonding two separate SOI wafers together, A MEM device formed according to the method is also claimed.