METHOD FOR FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact plug of a semiconductor device is provided to be capable of reducing process cost by changing processes. CONSTITUTION: A contact hole is formed by selectively etching an interlayer dielectric of a semiconductor substrate(S100). A barrier metal is deposited at the upper portion of the resultant structure by carrying out a blanket type depositing process(S110). A tungsten layer is deposited on the entire surface of the resultant structure for completely filling the contact hole(S120). The first dry etching process is carried out at the resultant structure for exposing the barrier metal by using the barrier metal as an etching stop layer(S130). The second dry etching process is carried out at the resultant structure for removing the exposed barrier metal(S140).