| 摘要 |
<p>A semiconductor device in which the polarity of a zinc oxide based thin film being formed on a substrate can be controlled simply and easily. Polarity of a ZnO substrate (1) is judged, and a ZnO thin film (2) is formed on the zinc polarity face (1a) of the ZnO substrate (1) if a ZnO thin film having a zinc polarity is desired whereas a ZnO thin film is formed on the oxygen polarity face (1b) of the ZnO substrate (1) if a ZnO thin film having an oxygen polarity is desired, thus obtaining a desired ZnO thin film having properties different dependent on the polarity simply and easily.</p> |
