发明名称 |
N-TYPE SEMICONDUCTOR DIAMOND PRODUCING METHOD AND SEMICONDUCTOR DIAMOND |
摘要 |
An n-type semiconductor diamond producing method, an n-type semiconductor diamond, pn-junction semiconductor diamond, a pnp-junction semiconductor diamond, an npn-junction semiconductor diamond, and a pin-junction are provided. A diamond {100} single-crystal substrate (10) is processed to form a diamond {111} surface. A diamond is epitaxially grown while the diamond {111} surface is being doped with an n-type dopant to form an n-type diamond epitaxial layer (20). Combining a thus produced n-type semiconductor diamond, a p-type semiconductor diamond, and a non-doped diamond, and using a p-type semiconductor diamond {100} single-crystal substrate, a pn-junction semiconductor diamond, a pnp-junction semiconductor diamond, an npn-junction semiconductor diamond, and a pin-junction semiconductor diamond are produced.
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申请公布号 |
WO03106743(A1) |
申请公布日期 |
2003.12.24 |
申请号 |
WO2003JP07717 |
申请日期 |
2003.06.18 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NAMBA, AKIHIKO;IMAI, TAKAHIRO;NISHIBAYASHI, YOSHIKI |
发明人 |
NAMBA, AKIHIKO;IMAI, TAKAHIRO;NISHIBAYASHI, YOSHIKI |
分类号 |
C30B25/02;C30B29/04;H01L21/04;H01L21/20;H01L21/205;H01L21/44;(IPC1-7):C30B29/04 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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