| 摘要 |
An MRAM device (160) and manufacturing process thereof having aluminum conductive lines (134) and (152), with self-aligning cross-points. Conductive lines (134) and metal stack (138) are patterned in a single patterning step and etched. Conductive lines (152) positioned orthogonally to conductive lines (134) are patterned simultaneously with the patterning of metal stack (138) and are etched. The metal stack (138) serves as an anti-reflective coating for conductive lines (152) during the etching process. A multi-level MRAM device may be manufactured in accordance with an embodiment of the invention. |
