PMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A PMOS device and a method for manufacturing the same are provided to be capable of improving the electrical characteristic of the PMOS device by using a selective epitaxial growth method. CONSTITUTION: A PMOS device is provided with an insulating substrate(101), an oxide layer(102) formed at the upper center portion of the insulating substrate, and a nitride layer(103) formed at the upper portion of the oxide layer. The PMOS device further includes a polysilicon layer(104) formed at the upper portion of the insulating substrate for enclosing the nitride layer enough and a gate stack formed at the upper portion of the polysilicon layer. At this time, the polysilicon layer is formed by carrying out a selective epitaxial growth.