| 摘要 |
<p>A vapor phase epitaxy device, at least comprising an enclosable reactor, a wafer storage part installed in the reactor for disposing a wafer at a specified position, a gas feed means for feeding raw gas to the wafer, and a heating means for heating the wafer, wherein an epitaxy film is formed on the surface of the wafer by feeding the raw gas into the reactor in hot state while the wafer is heated in the reactor by the heating means through the wafer storage part and, when the wafer storage part is formed of a single material or a single member, the ratio R2/R1 of the heat resistance R2 of a heat transfer route extending from the rear surface of the wafer storage part to the front surface of the wafer storage part to the heat resistance R1 of a heat transfer route extending from the rear surface of the wafer storage part to the front surface of the wafer is 0.4 to 1.0.</p> |
