ENHANCED STRUCTURE AND METHOD FOR BURIED LOCAL INTERCONNECTS
摘要
<p>A structure and method is disclosed for forming a buried interconnect (10) of an integrated circuit in a single crystal semiconductor layer (12) of a substrate. The buried interconnect is formed of a deposited conductor and has one or more vertical sidewalls (18) which contact a single crystal region of an electronic device (20) formed in the single crystal semiconductor layer.</p>
申请公布号
WO03107430(A1)
申请公布日期
2003.12.24
申请号
WO2002US19238
申请日期
2002.06.14
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;DIVAKARUNI, RAMACHANDRA;GLUSCHENKOV, OLEG;MANDELMAN, JACK, A.;RADENS, CARL, J.;WONG, ROBERT, C.
发明人
DIVAKARUNI, RAMACHANDRA;GLUSCHENKOV, OLEG;MANDELMAN, JACK, A.;RADENS, CARL, J.;WONG, ROBERT, C.