| 发明名称 |
METHOD FOR FORMING METAL PATTERN AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR(TFT) SUBSTRATE USING THE SAME |
| 摘要 |
PURPOSE: A method for forming a metal pattern and a method for manufacturing a TFT(Thin Film Transistor) substrate using the same are provided to be capable of simplifying manufacturing processes by exposing and developing a photosensitive organic metal layer for forming the metal pattern. CONSTITUTION: An organic metal layer is formed by coating photosensitive organic metal adhering agent. An exposure process is carried out at the organic metal layer by using a photo mask. A metal pattern is formed by carrying out a development process at the organic metal layer. Preferably, the organic metal layer developing process is carried out by using organic solution. Preferably, a light blocking pattern of the photo mask is formed into a predetermined shape. |
| 申请公布号 |
KR20030095605(A) |
申请公布日期 |
2003.12.24 |
| 申请号 |
KR20020032884 |
申请日期 |
2002.06.12 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, HONG JE;JUNG, CHANG O;KANG, SEONG CHEOL;PARK, AE NA;PARK, BONG OK;PARK, HONG SIK |
| 分类号 |
G02F1/1343;G02F1/1345;G02F1/1368;G03F7/004;G09F9/30;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01L51/00;H01L51/05;H01L51/40;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/1343 |
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