METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving a leakage current and latch up phenomenon by forming an oxide layer at the lower portion of a well. CONSTITUTION: After preparing an isolating layer(101) defined with an active region and an isolation region, an isolation layer(102) is formed at the isolation region. An oxygen ion layer is formed at the predetermined inner portion of the insulating substrate by implanting oxygen ions into the entire surface of the insulating substrate. A well(104) is formed at the upper portion of the oxygen ion layer by implanting well ions into the entire surface of the resultant structure. A predetermined oxide layer(105) is formed by carrying out an oxidation process at the oxygen ion layer, while activating the well by carrying out heat treatment at the resultant structure.