A conventional pin photodetector structure consisting of an n-type semiconductor substrate(101) of thickness (121). On top of the substrate, a n-type semiconductor buffer layer (102) of thickness (122), followed by an intrinsic semiconductor layer (103) of thickness (123), and p-type semiconductor layer (105) of thickness (125), are all grown epitaxially on the substrate (101).
申请公布号
WO03077283(A3)
申请公布日期
2003.12.24
申请号
WO2003US06506
申请日期
2003.03.04
申请人
YALE UNIVERSITY;SUN, YANNING;WOODALL, JERRY, M.;HARMON, ERIC, S.;SALZMAN, DAVID, B.
发明人
SUN, YANNING;WOODALL, JERRY, M.;HARMON, ERIC, S.;SALZMAN, DAVID, B.