| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to be capable of solving problems due to the volume effect of photoresist by filling a contact hole after forming the contact hole regardless of the change of thermal energy at the inner portion of an oven. CONSTITUTION: After sequentially forming an interlayer dielectric(110a), an oxide layer(120a), and a nitride layer(130a) at the upper portion of a semiconductor substrate(100), a pre-hole is formed by selectively removing the nitride layer for exposing the oxide layer. A gap-fill material layer(160a) is formed on the inner surface of the pre-hole. A contact hole(170) is formed by selectively removing the gap-fill material layer, the oxide layer, and the interlayer dielectric using a self-alignment blanket etching process. Then, the contact hole is completely filled.
|
