发明名称 |
STRUCTURE AND METHOD FOR AN EMITTER BALLAST RESISTOR IN AN HBT |
摘要 |
According to one exemplary embodiment, a heterojunction bipolar transistor (200) comprises an emitter (216). The heterojunction bipolar transistor (200) further comprises a first emitter cap (218) comprising a first high-doped layer (204), a low-doped layer (206), and a second high-doped layer (208), where the first high-doped layer (204) is situated on the emitter (216), the low-doped layer (206) is situated on the first high-doped layer (204), and the second high-doped layer (208) is situated on the low-doped layer (206). The first high-doped layer (204), the low-doped layer (206), and the second high-doped layer (208) form an emitter ballast resistor. According to this exemplary embodiment, the low-doped layer has a thickness and a dopant concentration level such that the resistance of the low-doped layer (206) is substantially independent of the dopant concentration level, but corresponds to the thickness of the low-doped layer (206).
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申请公布号 |
WO03085743(B1) |
申请公布日期 |
2003.12.24 |
申请号 |
WO2003US09927 |
申请日期 |
2003.04.01 |
申请人 |
SKYWORKS SOLUTIONS, INC. |
发明人 |
HONG, KYUSHIK;BURTON, RICHARD, S.;MATINE, NOUREDDINE;GREEN, DEBORA, L.;KRUMM, CHARLES, F. |
分类号 |
H01L21/331;H01L29/73;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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