发明名称 Method for heat processing of substrate
摘要 The present invention relates to a method for subjecting a substrate on which a coating film is formed to heat processing, and the method comprises the steps of heating the substrate to a predetermined high temperature and decreasing the temperature of the substrate to a predetermined low temperature, wherein in the step of decreasing the temperature of the substrate to the low temperature, a first step of decreasing the temperature of the substrate from the predetermined high temperature to a predetermined intermediate temperature and a second step of decreasing the temperature of the substrate from the intermediate temperature to the predetermined low temperature are performed separately. In the present invention, the step of decreasing the temperature of the substrate, which is heated to the high temperature, to the predetermined low temperature is divided into two stages as described above, and hence compared with a case where the temperature of the substrate is rapidly decreased nonstop from the high temperature to the low temperature, the temperature decreasing speed of the substrate is reduced, whereby cracks, a warp, and the like caused by the rapid cooling of the substrate can be prevented.
申请公布号 US6665952(B2) 申请公布日期 2003.12.23
申请号 US20030382490 申请日期 2003.03.07
申请人 TOKYO ELECTRON LIMITED 发明人 NAGASHIMA SHINJI
分类号 B05D3/02;B05C9/14;B05D3/04;B05D7/00;H01L21/00;H01L21/316;H01L21/324;H01L21/768;(IPC1-7):F26B7/00 主分类号 B05D3/02
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