发明名称 Image sensor for offsetting threshold voltage of a transistor in a source follower
摘要 There is disclosed an image sensor wherein the dispersion in threshold voltages of a transistor constituting a source follower for outputting a signal is compensated. The disclosed image sensor is provided with a coupling capacitor to which an output voltage of a pixel is applied through a transistor and with a transistor of a source follower to read out a voltage at the node S/Hn of the coupling capacitor. The image sensor is so configured that a drain of a transistor is used as a power supply voltage and the transistor is turned on, causing a node S/Hn pre-charged to the power supply voltage, and then the transistor is turned on, causing the voltage of the node S/Hn to be clamped on a sum of a definite voltage and a threshold voltage of the transistor, and further the transistor is turned on, causing an output voltage generated when a pixel is exposed to light to be added to the capacitor, and by restoring the transistor to a power supply voltage of the drain and by again turning the transistor on, an output voltage generated when a pixel is unexposed to light is applied to the capacitor.
申请公布号 US6667767(B1) 申请公布日期 2003.12.23
申请号 US19990362220 申请日期 1999.07.28
申请人 NEC ELECTRONICS CORPORATION 发明人 MURAMATSU YOSHINORI;KUROSAWA SUSUMU
分类号 H01L27/146;H04N5/217;H04N5/335;H04N5/341;H04N5/365;H04N5/369;H04N5/3745;H04N5/378;(IPC1-7):H04N9/64;H04N3/14;H01L27/00 主分类号 H01L27/146
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