发明名称 Expanded implantation of contact holes
摘要 A method of forming electrical contacts includes the step of implanting ions into a contact hole at an angle to create an enlarged plug enhancement region at the bottom of a contact hole. Thus, even if the contact hole is misaligned, over-sized, or over-etched, the enlarged plug enhancement region contains subsequently formed barrier layers and other conductive materials to reduce current leakage into the underlying substrate or into adjacent circuit elements.
申请公布号 US6667554(B2) 申请公布日期 2003.12.23
申请号 US20010940229 申请日期 2001.08.27
申请人 MICRON TECHNOLOGY, INC. 发明人 RHODES HOWARD E.;PRALL KIRK D.;IRELAND PHILIP J.;HAGEN KENNETH N.
分类号 H01L21/265;H01L21/285;(IPC1-7):H01L23/48;H01L23/52 主分类号 H01L21/265
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