| 摘要 |
A method for fabricating cell plugs of a semiconductor device is disclosed, which increases the operation speed of the semiconductor device by reducing the cell plug resistance of the device. The method includes the steps of forming a first insulating interlayer on a semiconductor substrate, forming a first cell plug on the semiconductor substrate through the first insulating interlayer, forming a second insulating interlayer on the semiconductor substrate, forming a silicide contact on a predetermined surface of the first cell plug through the first insulating interlayer, and forming a second cell plug on the silicide contact through the second insulating interlayer.
|
