Bitline precharge circuit and method in semiconductor memory device

摘要

A bitline precharge circuit and a method for precharging bitlines in a semiconductor memory device are described herein. The bitline precharge circuit includes a driving control unit configured to output a VDD driving signal and a VPP driving signal in response to a bitline precharge enable signal, a precharge circuit driving unit configured to output bitline precharge signal of a power supply voltage VDD level or a boosted voltage VPP level in response to the VDD driving signal or the VPP driving signal, and a bitline precharge unit configured to precharge bitlines in response to the bitline precharge signal. A voltage level of the bitline precharge signal reaches the VDD level for a predetermined time from an enabled starting point of the bitline precharge enable signal, and then the voltage level of the bitline precharge signal reaches the VPP level after the predetermined time.