Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer

摘要

A magnetic tunnel junction device is provided that includes a free layer and a pinned layer separated by a barrier layer. According to the invention, the free layer includes a ferrimagnetic layer and an anti-parallel layer having a magnetic moment that is substantially anti-parallel to a magnetic moment of the ferrimagnetic layer at least within a predetermined temperature range of the magnetic tunnel junction device. A memory array that includes such a magnetic tunnel junction is also provided.